As night falls on Barcelona, a city known not only for its ability to embrace the wonders of technology, but also for its architectural wonders, the 2024 Mobile World Congress (MWC) opens the door to a future shaped by innovation and bold aspirations. Among countless tech giants and startups, Waltham, Massachusetts-based FinWave Semiconductor Inc. has stood out with innovative products that promise to redefine communications infrastructure and the mobile phone market. At the heart of this breakthrough is the latest silicon gallium nitride (GaN-on-Si) technology and high-power switches designed to propel the industry into his 6G era.
Revealing the future: GaN-on-Si technology
Finwave Semiconductor’s showcase at MWC Barcelona was not only a show of technological prowess, but also a bold statement about the future of telecommunications. The company’s enhancement mode (Emode) 200mm GaN-on-Si RF field-effect transistor (FET) distinguishes itself from traditional depletion mode GaN technology by offering less than 1Ω-mm on-resistance, low knee voltage, and superior Provides transconductance. 700mS/mm or more. These features, combined with negligible current decay and power added efficiency (PAE) as high as 60%, make Finwave’s technology a power amplifier in the 6G FR3 frequency band (7-24GHz) and FR2 mmWave for infrastructure applications. It is an ideal solution for Customer Premise Equipment (CPE), and handset applications.
Pushing the limits with 3DGaN FinFETs and high-power RF switches
In addition to the GaN-on-Si breakthrough, Finwave has introduced 3DGaN FinFET technology. This will revolutionize massive MIMO applications by improving linearity, reducing transistor leakage, and enhancing PAE. The company also announced a new family of high-power RF switch products that boast fast switching times, wideband operation, and high power handling capabilities. His CEO of Finwave Semiconductor, Dr. Pierre-Yves Lesachères, pointed to the company’s journey from the MIT laboratory to high-volume manufacturing and the pivotal role of his GaN technology in enabling new markets. He emphasized the importance of progress.
Looking to the future: Implications for 6G and beyond
The impact of Finwave Semiconductor’s innovation extends far beyond MWC Barcelona. The telecommunications industry is on the brink of his 6G era, where improved device efficiency, improved linearity, and improved power handling become paramount. Finwave’s GaN-on-Si and 3DGaN FinFET technologies not only meet these demands, but also accelerate the deployment of 6G infrastructure and devices, promising to usher in a new era of connectivity. With these advances, the future of telecommunications will be more than just speed and bandwidth. It’s about redefining the boundaries of what’s possible, from smart cities and self-driving cars to telemedicine and more.
